Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs
- Resource Type
- Authors
- Ani Khachatrian; Dale McMorrow; Joel M. Hales; Nelson E. Lourenco; Mason T. Wachter; Nicolas J.-H. Roche; S. P. Buchner; Jeffrey H. Warner; Adrian Ildefonso; George N. Tzintzarov; Zachary E. Fleetwood; John D. Cressler; Pauline Paki
- Source
- IEEE Transactions on Nuclear Science. 64:398-405
- Subject
- Nuclear and High Energy Physics
Materials science
Heterojunction bipolar transistor
02 engineering and technology
computer.software_genre
01 natural sciences
law.invention
chemistry.chemical_compound
law
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Electronic engineering
Waveform
Electrical and Electronic Engineering
Oscilloscope
010308 nuclear & particles physics
business.industry
020208 electrical & electronic engineering
Laser
Simulation software
Silicon-germanium
Nuclear Energy and Engineering
chemistry
Optoelectronics
Transient (oscillation)
business
Technology CAD
computer
- Language
- ISSN
- 1558-1578
0018-9499
Silicon-germanium heterojunction bipolar transistor (SiGe HBT) models are used in technology computer aided design (TCAD) to investigate single event transients induced by heavy-ion broadbeam and pulsed-laser two-photon absorption sources. A comparison between transient waveforms is provided, the proper extraction of heavy-ion broadbeam transients is discussed (along with circuit implications), and basic laser strike profiles are implemented in TCAD to provide insight into future design practices for simulation software to be used to describe laser-induced upsets in terms of an effective linear energy transfer (LET).