Roll-to-roll UV imprint for bottom-up transistor fabrication
- Resource Type
- Authors
- R. Tacken; Peter Giesen; M. Wijnen; Erwin R. Meinders; D. Turkenburg; N. Stroeks; R. van der Werf; Pascale Maury
- Source
- Journal of Photopolymer Science and Technology, 1, 24, 43-45
- Subject
- Interconnection
TS - Technical Sciences
Materials science
Fabrication
Polymers and Plastics
Replica
Organic Chemistry
Transistor
HOL - Holst
Nanotechnology
Substrate (printing)
Mechatronics, Mechanics & Materials
Bottom-up transistor
Self-alignment
Roll-to-roll processing
law.invention
law
Materials Chemistry
Hardware_INTEGRATEDCIRCUITS
Electronics
Electroplating
Nanoimprint
Lithography
R2R imprint
- Language
- English
We propose a design to fabricate transistors on flexible substrates in a bottom-up fashion using R2R UV-imprint lithography. The design consists of a template composed of multilevel as well as gray level features, the later used to facilitate device interconnection. A hard mold is fabricated by LBR and a flexible Ni replica is done using Ni electroplating. The flexible stamp is used in the R2R UV imprint machine with PET as flexible substrate. Imprints were performed at a speed of 0.35m/min and show a high level of replication of the multilevel as well as gray level features.