Reduced oxygen partial pressure SiGe condensation for the fabrication of compressively strained SGOI substrates
- Resource Type
- Authors
- Damien Valenducq; F. Abbate; Denis Rouchon; Fabien Deprat; Olivier Gourhant; Elisabeth Blanquet; Veronique Guyader
- Source
- 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
- Subject
- 010302 applied physics
Materials science
Fabrication
Strain (chemistry)
Condensation
Kinetics
Silicon on insulator
02 engineering and technology
Partial pressure
Surface finish
021001 nanoscience & nanotechnology
01 natural sciences
Crystallographic defect
0103 physical sciences
Composite material
0210 nano-technology
- Language
We report the use of a low oxygen partial pressure dry furnace oxidation process for the fabrication of ultra-thin compressively strained SGOI layers. The effect of a reduced oxygen partial pressure on oxidation kinetics and Ge depth profile evolution is shown. Resulting strain, SiGe surface and roughness evaluation are carried out to compare the residual strain values and the crystal defects generation to results obtained with a conventional pure oxygen process.