Manufacturing uniform field silicon drift detector using double boron layer
- Resource Type
- Authors
- Ryoichi Ishihara; Negin Golshani; C. W. J. Beenakker
- Source
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 794:206-214
- Subject
- Physics
Nuclear and High Energy Physics
Silicon drift detector
business.industry
chemistry.chemical_element
Nanotechnology
chemistry
Electric field
Shallow junction
Optoelectronics
Uniform field
business
Boron
Instrumentation
Layer (electronics)
- Language
- ISSN
- 0168-9002
Novel SDDs with continuous junctions on both sides are fabricated using pure boron (PureB) depositions to create a shallow junction in the entrance window side and a continuous rectifying junction with different potentials as function of the drift coordinate in the device side. The SDDs made in this material offer lower leakage current. In addition, continuous SDD designed with two boron layers with different sheet resistances displays uniform electric field.