Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors
- Resource Type
- Authors
- Menglin Cao; Xu Li; Mohamed Missous; Iain G. Thayne
- Source
- Microelectronic Engineering. 140:56-59
- Subject
- Materials science
business.industry
Transistor
Analytical chemistry
chemistry.chemical_element
High-electron-mobility transistor
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
chemistry
Molybdenum
law
Etching (microfabrication)
Optoelectronics
Degradation (geology)
Dry etching
Electrical and Electronic Engineering
Inductively coupled plasma
business
Nanoscopic scale
- Language
- ISSN
- 0167-9317
This paper demonstrates a low damage inductively coupled plasma SF6/C4F8 dry etch process for the realisation of nanoscale molybdenum gate lines. The optimised process is capable of defining 30nm lines in 100nm thick molybdenum films, with no observable degradation of the mobility of an InGaAs/InAlAs high electron mobility transistor structure which was subjected to the etch. These characteristics make the process reported here suitable for the realisation of short gate length, high performance III-V compound semiconductor transistors. Display Omitted 30nm nanoscale molybdenum gate linesLow damage inductively coupled plasma SF6/C4F8 dry etch processNo observable degradation of the mobility of InGaAs channelSuitable for short gate length, high performance III-V devices