Orientation of PZT thin films prepared by sol-gel techniques
- Resource Type
- Authors
- Jinrong Cheng; Zhongyan Meng; Laiqing Luo
- Source
- Proceedings of the 6th International Conference on Properties and Applications of Dielectric Materials (Cat. No.00CH36347).
- Subject
- Crystallography
Materials science
Morphology (linguistics)
law
Scanning electron microscope
X-ray crystallography
Crystal orientation
Texture (crystalline)
Crystallization
Thin film
Composite material
law.invention
Sol-gel
- Language
The authors study the crystal orientation of PZT thin films fabricated by using sol-gel routes on [111] Pt/Ti/SiO/sub 2//Si substrates. The crystallization of PZT thin films was performed at 650/spl deg/C for 30 minutes by using rapid thermal annealing (RTA) routes. XRD analysis was used to identify the film orientation. The morphology was examined using SEM. The different ratios of Zr/Ti, the lead contents in precursor solutions, the modification of the PZT precursor and the film thickness have obvious effects on the formation of [111] or [100] preferred and random-oriented PZT thin films. It is concluded that controlling the orientation of PZT thin films can be realized by using the sol-gel routes and normal Pt/Ti/SiO/sub 2//Si substrates.