Back-end induced IMO layer charging
- Resource Type
- Authors
- M.S. Lin; C.H. Fang; M.H. Liaw; L.M. Liu; L.S. Tsai; S.L. Ying; K.M. Lin; J.J. Lin; S.L. Hsu
- Source
- 1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference.
- Subject
- Materials science
Passivation
CMOS
business.industry
Electrical engineering
Optoelectronics
Double metal
Dielectric thin films
business
Cmos process
- Language
Field Inversion generated in a CMOS double metal process due to the back-end process was studied. Generated positive charges were related to reaction between PETEOS and noncarbon based SOG during alloying. Replacing PETEOS with Si-rich PETEOS or PEOXIDE eliminated the charging problems and improved yield. >