Heterojunction field‐effect transistors based on AlGaSb/InAs
- Resource Type
- Authors
- L. F. Luo; W. I. Wang; H. Munekata; Roderic Beresford
- Source
- Applied Physics Letters. 55:789-791
- Subject
- Materials science
Fabrication
Physics and Astronomy (miscellaneous)
business.industry
Transconductance
Transistor
Heterojunction
law.invention
law
Electrical resistivity and conductivity
Optoelectronics
Field-effect transistor
business
Layer (electronics)
Order of magnitude
- Language
- ISSN
- 1077-3118
0003-6951
We have fabricated the first InAs‐channel field‐effect transistor, which shows a transconductance of 180 mS/mm at 1 V drain‐source bias (77 K). An improved buffer layer could significantly improve the device performance. In addition, we propose a new broken‐gap heterojunction field‐effect transistor based on these materials that could provide an order of magnitude higher transconductance compared to existing device configurations based on AlGaAs/GaAs.