Recently much research has been focused on increasing the functionality and output power density per unit area in power electronic modules without increasing board space. In high power applications, MOS-controlled devices with trench gates are the most desirable as their reduced V ce(sat) enables increased conduction current density. However, with increased drift region thickness, there is significant increase in conduction loss in trench gate-insulated gate bipolar transistor (T-IGBT) due to low plasma density from inherent p-n-p transistor action. In comparison, a well-designed MOS-controlled thyristor structure such as the trench-clustered insulated gate bipolar transistor (T-CIGBT), can provide low on-state conduction loss with gate voltage turn-on and turn-off. The comparison of 3.3 kV/800 A simulation results presented in this paper shows that the T-CIGBT is a superior candidate over TIGBT to increase the power density from existing high-voltage IGBT module footprints.