Optical transitions in monolayer WS2 observed through transient photoconductivity in MIS structures
- Resource Type
- Authors
- Valery V. Afanas'ev; Konstantin Iakoubovskii; Swati Achra; Ilya Shlyakhov; G. Delie
- Source
- Solid-State Electronics. 183:108033
- Subject
- 010302 applied physics
Materials science
Displacement current
Photoconductivity
High density
02 engineering and technology
Electron
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Molecular physics
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
0103 physical sciences
Monolayer
Materials Chemistry
Transient photocurrent
Transient (oscillation)
Electrical and Electronic Engineering
0210 nano-technology
- Language
- ISSN
- 0038-1101
Excitonic and band-to-band transitions in monolayer WS2 were observed using transient photoconductivity in metal-insulator-silicon structures. Significant improvement in sensitivity was achieved by introducing an Al/WS2 contact scheme. We attribute this improvement to high density of traps in the AlOx interlayer formed at the interface which gives rise to displacement current due to capture of electrons or holes optically generated in WS2. This new method is found to be viable with transferred monolayer films.