In-situ chemical polymerization of Cu-Polythiophenes composite film as seed layer for direct electroplating on insulating substrate
- Resource Type
- Authors
- Jinqun Zhou; Yuanming Chen; Shouxu Wang; Wei He; Chong Wang; Martin Andersson; Jiujuan Li; Zesheng Weng; Guoyun Zhou; Hua Miao; Yan Hong
- Source
- Electrochimica Acta. 330:135358
- Subject
- chemistry.chemical_classification
Materials science
General Chemical Engineering
Composite number
chemistry.chemical_element
02 engineering and technology
Polymer
Substrate (electronics)
Conductivity
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Copper
0104 chemical sciences
chemistry
Polymerization
Electrochemistry
Composite material
0210 nano-technology
Electroplating
Layer (electronics)
- Language
- ISSN
- 0013-4686
Metal particles are embedded in the polymer to form a polymer composite film as a seed layer on an insulating substrate to overcome the limitation that electrodeposited copper only occurring at the interface between the polymer and the metal electrode. In this work, we successfully developed a Cu-polythiophenes composite film (Cu-PT composite film) through a facile in-situ reduction method, obtaining porous-networked PT containing homogeneously distributed Cu. the Cu-PT composite film serve as a feasible seed layer for subsequent metallization on the insulating substrate. The deposition conditions for the optimized migration rate of copper during the electroplating process of the composite film were obtained by multiple groups of single factor experiments. Notably, electroplated textile fabrics with the Cu-PT composite film demonstrate a wide stretch-resistant working range (0–50% applied strain) maintaining stable conductivity.