N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory
- Resource Type
- Authors
- Junhao Chu; Zhitang Song; Cheng Peng; Bo Liu; Liangcai Wu; Pingxiong Yang; Jian'an Xu; Xilin Zhou; Min Zhu; Feng Rao
- Source
- Electrochemical and Solid-State Letters. 15:H101
- Subject
- Materials science
General Chemical Engineering
Doping
chemistry.chemical_element
Nanotechnology
Electrochemistry
Nitrogen
Crystallization temperature
Phase-change memory
chemistry
Chemical engineering
Phase (matter)
General Materials Science
Electrical and Electronic Engineering
Physical and Theoretical Chemistry
- Language
- ISSN
- 1099-0062
Nitrogen incorporated Si0.6Sb2Te3 film shows higher crystallization temperature (similar to 185 degrees C) than Ge2Sb2Te5 (similar to 150 degrees C). No separated Si or Te phase is observed within crystalline nitrogen-doped Si0.6Sb2Te3 material (SST-N). N