Sacrificial wafer bonding for planarization after very deep etching
- Resource Type
- Authors
- Michael Curt Elwenspoek; Johan W. Berenschot; V.L. Spiering; J.H.J. Fluitman
- Source
- Journal of microelectromechanical systems, 4(3), 151-157. IEEE
- Subject
- Materials science
Silicon
Wafer bonding
Mechanical Engineering
METIS-128999
chemistry.chemical_element
Nanotechnology
chemistry
Anodic bonding
Etching (microfabrication)
Chemical-mechanical planarization
Wafer
Dry etching
Electrical and Electronic Engineering
Composite material
Reactive-ion etching
IR-24199
- Language
- English
- ISSN
- 1057-7157
A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of polymer bonding followed by dry etching and anodic bonding combined with KOH etching are discussed. The polymer bonding has been applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges. >