A 70-GHz-fT double-polysilicon SiGe HBT using a non selective epitaxial growth
- Resource Type
- Authors
- A. Monroy; Alain Chantre; B. Martinet; C. Fellous; J. Mourier; Helene Baudry; G Troillard; F Romagna; Michel Marty; Didier Dutartre; M. Laurens
- Source
- Materials Science and Engineering: B. 89:21-25
- Subject
- Reproducibility
Fabrication
Materials science
Silicon
business.industry
Mechanical Engineering
Heterojunction bipolar transistor
chemistry.chemical_element
Condensed Matter Physics
Epitaxy
Design for manufacturability
chemistry
Mechanics of Materials
Double polysilicon
Optoelectronics
General Materials Science
business
Common emitter
- Language
- ISSN
- 0921-5107
This paper describes a high performance heterojunction bipolar transistor using a low complexity double polysilicon architecture. Non selective Si/SiGe epitaxy was selected for the base formation, allowing higher manufacturability than for a selective process. Low spread in statistical results confirms very good control and reproducibility of the Si/SiGe stack deposition and epitaxially aligned emitter fabrication. Static and high frequency measurements analysis shows excellent set of electrical parameters: 70-GHz-f T and 90-GHz-f max have been measured for 2.5 BV CE0 devices.