ELECTRIC PROPERTIES OF Mn-DOPED BiFeO3 THIN FILM DEPOSITED ON ITO SUBSTRATE
- Resource Type
- Authors
- J. M. LUO
- Source
- Surface Review and Letters. 22(04):1550048-1
- Subject
- Electric properties, ferroelectric, resistive switching, bismuth ferrite, chemical solution deposition, 73.40.Rw, 77.22.Jp, 77.55.Nv
- Language
Nanoscale Mn-doped BiFeO3 thin film with a perovskite crystal structure has been fabricated on ITO substrate using chemical solution deposition, which shows a large dielectric constant and a low leakage current. The ferroelectric test result demonstrates that large values of remanent polarization and coercive field can be attained in this structure. Additionally, stable resistive switching characteristics with an analysis of current conduction mechanisms have also been investigated, which can be attributed to the redistribution of oxygen vacancies under an electric field. This study suggests that Mn-doped BFO thin film grown on ITO substrate may provide a potential application for multifunctional memories.