The influence of hydrogen gas on the characteristics of amorphous silicon deposited by RF sputtering
- Resource Type
- Authors
- R.H. Wang; Juh Tzeng Lue; O. Meyer; J. Lombaard
- Source
- Solid-State Electronics. 25:1011-1016
- Subject
- Amorphous silicon
Materials science
Hydrogen
Band gap
Analytical chemistry
chemistry.chemical_element
Substrate (electronics)
Conductivity
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Temperature treatment
chemistry
Sputtering
Attenuation coefficient
Materials Chemistry
Electrical and Electronic Engineering
- Language
- ISSN
- 0038-1101
The electrical and optical properties of a-Si depend greatly on the fill gas and substrate temperature during RF sputtering. From the measured absorption coefficient, it was estimated that after the introduction of H 2 gas during sputtering the gap state density reduces from 3.2 × 10 19 cm −3 to 4.8 × 10 17 cm −3 . As a consequence the optical band gap was found to increase from 1.74 to 1.82 eV. The d.c. conductivity measurement shows three distinct conducting mechanisms at different temperature regions. The SiH bonds in RF sputtered samples are persistant to higher temperature treatment than the CVD prepared ones.