Electronic structure and electrical conduction of ultrathin Bi₂Te₃ films
- Resource Type
- Authors
- Hatta, Shinichiro
- Source
- 京都大学物性科学センター誌 : LTMセンター誌. 39:3-9
- Subject
- Language
- Japanese
- ISSN
- 2432-0587
We have investigated electronic structure and electrical conduction of ultrathin (111)-oriented Bi₂Te₃ films epitaxially grown on Si (111). Layer-by-layer growth of Bi₂Te₃ was confirmed by electronic band structure depending on the number of quintuple layers (QLs). In situ four-point probe conductivity measurements showed metallic conduction of the films at 1–5 QL. A large increase in conductivity from 1 to 2 QL is related to a bulk-like conduction band (CB) state. Although the partial occupation of the CB is attributed to antisite defects at the Bi site, scattering by the defects is expected to be insignificant because the CB electrons are localized at the Te atoms forming the van der Waals interface.