Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor
- Resource Type
- Authors
- E. D. Fraser; J.-M. Kuo; Y.-C. Kao; K. W. Vargason; K. P. Clark; P. R. Pinsukanjana; K. K. Choi; K. Roodenko
- Source
- SPIE Proceedings.
- Subject
- Physics
business.industry
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Gallium arsenide
010309 optics
Condensed Matter::Materials Science
chemistry.chemical_compound
Optics
chemistry
0103 physical sciences
Optoelectronics
Wafer
Infrared detector
0210 nano-technology
Quantum well infrared photodetector
business
Quantum well
Molecular beam epitaxy
Dark current
- Language
- ISSN
- 0277-786X
Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.