A Charge Domain SRAM Compute-in-Memory Macro With C-2C Ladder-Based 8-Bit MAC Unit in 22-nm FinFET Process for Edge Inference
- Resource Type
- Source
- IEEE Journal of Solid-State Circuits. 58:1037-1050
- Subject
Electrical and Electronic Engineering - Language
- ISSN
- 1558-173X
0018-9200