The crystallization behaviour of three amorphous alloys, Co50Ni25Si15B10, Ni50Co25Si15B10 and Ni50Co25P15B10, was studied by means of differential thermal analysis in conjunction with scanning transmission electron microscopy. Isochronal annealing showed a strong dependence of crystallization on scan rate over the range of 1.99 to 20.70 K min−1. At high Co/Ni ratios, a sequential two-stage crystallization process involving primary MS-I phase followed by MS-II phase precipitation was observed. At low Co/Ni ratios MS-I and MS-II crystallization were concurrent and inseparable. Replacement of the metalloid Si with P as the glass-former dramatically reduced the activation energy for crystallization as well as the crystallization temperature. A mechanistic understanding of these findings was pursued in light of TEM/STEM microanalysis