Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow
- Resource Type
- Authors
- D. Marchesan; Hai Tran; Tom J. Smy; Chris Reimer; Michael Schroter; D.J. Walkey
- Source
- Solid-State Electronics. 46:7-17
- Subject
- Materials science
Computer simulation
business.industry
Thermal resistance
Bipolar junction transistor
Transistor
Condensed Matter Physics
Thermal conduction
Electronic, Optical and Magnetic Materials
law.invention
law
Thermal
Trench
Materials Chemistry
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
business
Common emitter
- Language
- ISSN
- 0038-1101
Heat flow in short emitter length bipolar devices in trench-isolated technologies is investigated through three-dimensional numerical thermal simulation, and thermal conduction through the trench walls is shown to be important for these structures. A new model is presented which predicts the thermal resistance of bipolar transistors in trench-isolated technologies down to emitter lengths of 1.2 μm. The effect of the parasitic thermal path introduced by emitter metal is also included in the new model. The prediction of this model is compared to numerical simulation and measurement, and found to be in excellent agreement.