mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis
- Resource Type
- Authors
- Valeria Vadala; Giovanni Crupi; Rocco Giofre; Gianni Bosi; Antonio Raffo; Giorgio Vannini
- Source
- Subject
- millimeter-wave frequency
high-electron-mobility transistor (HEMT)
multifinger layout
Settore ING-INF/01
temperature
ING-INF/01 - ELETTRONICA
gallium nitride (GaN)
scattering parameter measurement
- Language
- English
This study is aimed at investigating the performance of an advanced GaN HEMT technology for millimeter-wave applications. Both DC and frequency-dependent measurements are performed on three multifinger on-wafer 0.15-µm transistors with different gate widths at different ambient temperatures for foreseeing GaN technology capability when applications require challenging frequency operation.