Initial stage of the growth of Fe on Si(111)(1 × 1)H
- Resource Type
- Authors
- M. C. Asensio; C. Teodorescu; Ph. Dumas; Yves J. Chabal; M. Gruyters; José Avila; Margarita Martín
- Source
- Applied Surface Science. :156-160
- Subject
- Silicon
Hydrogen
Chemistry
Infrared
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Infrared spectroscopy
Angle-resolved photoemission spectroscopy
Surfaces and Interfaces
General Chemistry
Condensed Matter Physics
Spectral line
Surfaces, Coatings and Films
Crystallography
Spectroscopy
Surface states
- Language
- ISSN
- 0169-4332
We report an infrared absorption spectroscopy, angle resolved photoemission (ARUPS) and X-ray photoelectron diffraction (XPD) investigation of ultra-thin ( H surfaces. The results from ARUPS showed that the two hydrogen-induced surface states in the valence-band spectra remain unaffected after the iron deposition. This conclusion is also confirmed by the Si H stretching infrared mode, which is not influenced by the metal deposition. Angular-scanned photoelectron diffraction (PD) of the Si 2p and Fe 3p core levels showed the formation of a well-ordered Fe/Si(111) H interface even at room temperature and the substitution of subsurface Si atoms by iron atoms.