Exploring metastable defect behavior in solution-processed antimony doped CIGS thin film solar cells
- Resource Type
- Authors
- Fabiana Lisco; Alex Eeles; Sona Ulicna; Mustafa Togay; Martin Bliss; Syeda Farwah Bukhari; John M. Walls; Jake W. Bowers
- Source
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
- Subject
- 010302 applied physics
Materials science
Admittance
Doping
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
Activation energy
021001 nanoscience & nanotechnology
01 natural sciences
Copper indium gallium selenide solar cells
Capacitance
Antimony
chemistry
Metastability
0103 physical sciences
0210 nano-technology
Spectroscopy
- Language
This study investigates the metastable defect behavior from temperature dependent current density-voltage (JVT) and capacitance spectroscopy measurements in solution-processed antimony (Sb) doped CIGS thin film solar cells. From the V oc (T) analysis, the main recombination mechanism is found to be Schottky-Read-Hall recombination in the bulk. A detailed study of the carrier concentration, defect density and energy level defects was performed using capacitance spectroscopy. Admittance spectroscopy measurements revealed an admittance step at low temperatures with an activation energy of 42 meV.