UV nanosecond pulsed laser annealing (UV-NLA) is demonstrating clear benefits in the emerging 3D-integrated electronic devices, where the allowed thermal budget is strictly limited to preserve underlying device performance. A possible drawback of UVNLA is that melting a solid substrate covered by a dielectric layer, which can be found in typical electronic device structures, induces wrinkles on the surface and may be an issue for subsequent processes. In this study, UV-NLA is performed in SiO2/Si structures to systematically investigate the emergence of wrinkles. A classical analytical model shows a good agreement with our experimental results if a fitting coefficient is involved. Interestingly, its value is rapidly increasing for a thinner SiO2 film, while it becomes closer to unity for a thicker SiO2 film. This might infer a possible discrepancy of the material properties taken from literature and those of real industrial thin SiO2 films.