Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond
- Resource Type
- Article
- Authors
- Oshida, Daisuke; Kume, Ippei; Katsuyama, Hirokazu; Taiji, Toshiji; Maruyama, Takuya; Ueki, Makoto; Inoue, Naoya; Iguchi, Manabu; Fujii, Kunihiro; Oda, Noriaki; Sakurai, Michio
- Source
- Japanese Journal of Applied Physics; May 2011, Vol. 50 Issue: 5 p05EB04-05EB06, 3p
- Subject
- Language
- ISSN
- 00214922; 13474065
The effects of postetching treatment (PET) using carbon-containing gas on molecular-pore-stacking (MPS)/Cu interconnects were investigated. By using this technology, a 5% reduction in wiring capacitance was obtained as a result of the hardening of exposed MPS at the trench bottom. Via-chain yield improvement was also confirmed as a result of eliminating of etching residues in via-holes. These results indicate that high production yield and reliability can be obtained by PET for 28-nm-node complementary metal oxide semiconductor (CMOS) devices and beyond.