A 1.2-V 1.76-Ppm/°C Low Voltage CMOS Band-Gap Reference
- Resource Type
- Article
- Authors
- Ma, Bill; Yu, Feng Qi
- Source
- Applied Mechanics and Materials; February 2013, Vol. 303 Issue: 1 p1798-1802, 5p
- Subject
- Language
- ISSN
- 16609336; 16627482
This paper proposes an innovative CMOS band-gap reference (BGR) topology with a curvature-compensation by using MOS transistors operating in weak inversion region. The mechanism is analyzed thoroughly and the corresponding BGR circuit has been implemented in standard CMOS 0.18u technology. The proposed BGR achieves 1.76 ppm/℃ in the range of -40℃ to 120℃ at 1.2V supply voltage. In addition, it consumes only 30uA current.