Determination of depth profiling of metal trace impurities on Si surface using total reflection X-ray fluorescence
- Resource Type
- Article
- Authors
- Fan, Q. -M.; Liu, Y. -W.; Li, D. -L.; Wei, C. -L.
- Source
- Fresenius' Journal of Analytical Chemistry; July 1993, Vol. 345 Issue: 7 p518-520, 3p
- Subject
- Language
- ISSN
- 09370633; 14321130
Total reflection X-ray fluorescence (TXRF) is used for non-destructive determination of depth profiling. A numerical processing is presented as impurity quantification in the continuum excitation TXRF without using standards. Dependences of concentration of impurities on depths ranging from a few tens to thousands Angströms are given for Fe and Cu on Si-wafer. The detection limits are in the range of 1010 atoms/cm2. The method was checked with Secondary Ion Mass Spectrometry (SIMS) and the agreement is reasonably good.