Dopant-activation and damage-recovery of Ion-shower-doped poly-Si through PH3/H2 after furnace annealing
- Resource Type
- Article
- Authors
- Kim, Dong-Min; Kim, Dae-Sup; Ro, Jae-Sang; Choi, Kyu-Hwan; Lee, Ki-Yong
- Source
- Journal of Information Display; 2004, Vol. 5 Issue: 1 p1-6, 6p
- Subject
- Language
- ISSN
- 15980316; 21581606
Ion shower doping with a main ion source of P2Hx using a source gas mixture of PH3/H2 was conducted on excimerlaser-annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIMcode simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.