Pre-State-Dependent Ternary/Binary Logic Operation Obtained by Inkjet Printed Indium Oxide and Single-Walled Carbon Nanotube/Indium Oxide Heterojunction-Based Transistors
- Resource Type
- Article
- Authors
- Kim, Somi; Jung, Seoyeon; Kim, Bongjun; Yoo, Hocheon
- Source
- IEEE Electron Device Letters; February 2023, Vol. 44 Issue: 2 p265-268, 4p
- Subject
- Language
- ISSN
- 07413106; 15580563
This work proposes a pre-state-dependent ternary and binary logic inverter using a single-walled carbon nanotube (SWCNT)/indium oxide (InO) heterojunction field-effect transistor (H-FET) which is reliably formed by an inkjet printing method. The proposed device exhibits a logic-in-memory characteristic that operates in either ternary or binary mode depending on the previous output voltage state. Such previous state dependent ternary/binary operations are observed even after 4 days of exposure under ambient conditions and with 90 s of constant supply of bias stress.