Substrate Bias Effect on Diamond Deposition by DC Plasma Jet
- Resource Type
- Article
- Authors
- Matsumoto, Seiichiro; Hosoya, Ikuo; Chounan, Takeshi
- Source
- Japanese Journal of Applied Physics; October 1990, Vol. 29 Issue: 10 p2082-2082, 1p
- Subject
- Language
- ISSN
- 00214922; 13474065
By applying positive bias voltage to a substrate in diamond CVD by a dc plasma jet of the Ar-H2-CH4system, the deposition rate increased more than twofold, and the maximum rate of 15 µm/min was obtained. The deposition area also increased but the uniformity of film thickness did not improve. Applying the bias voltage to a ring electrode around the substate increased the deposition rate by nearly the same amount without increasing the substrate temperature.