Nitrogen-doped TiO2 (N-TiO2)/polytetrafluoroethylene (PTFE) has been prepared by optimization of nitrogen and polytetrafluoroethylene. N-TiO2 has been modified by optimizing doping concentration in two-step process synthesis via solvothermal treatment, by mixing TiO2 and variation ammonium carbonate as a nitrogen source at 0.5 M, 1.0 M, 1.5 M. Synthesized materials denoted as N-TiO2, were characterized by X-Ray Diffraction (XRD), Fourier Transform Infrared ( FTIR), Scanning Electron microscopy (SEM), and spectrophotometer UV Vis. Based on the XRD pattern, a shift diffraction pattern was assigned to [101] that indicated the nitrogen successfully doped. The functional group identified by FTIR shown an O-Ti-N bond seems to influence the energy gap of TiO2. The presence of nitrogen as an impurity in semiconductor TiO2 was decreased the amount of bandgap energy from 3.10 eV to 2.95 eV. Synthesized N-TiO2 is a nanosphere morphology. Glass substrate containing N-TiO2/PTFE has excellent self-cleaning in a ratio N-TiO2/PTFE (1:3) and based on optical properties, show that each coating on the glass substrate has high transmittance for composition N-TiO2/PTFE (1:3) > 90%. The contact angle before and after oleic acid contaminant under visible light are 97.68 and 94.16º, respectively. The discoloration of methylene blue (MB) coated on the glass performed under visible light shown 60.32% degradation.