A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)--SiO2substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-(tert-butylamide)-2-dimethylaminoethane-N,N$\aku '$]manganese. A thin and uniform Mn oxide layer was simultaneously formed at a CVD-Mn/TEOS--SiO2interface, and was partially embedded in the TEOS--SiO2. This Mn oxide layer was composed of a bilayer of MnOxand MnSixOy. After annealing at 400 °C in vacuum for 10 h, the interface Mn oxide layer showed a good barrier property and thermal stability.