The pattern sensitivity for the data retention test of non-volatile memory was investigated. Through kinds of examples and combing theory analysis, it's found no universal sensitive pattern is capable to detect all kinds of process weakness, the selection of test pattern depends on the failure mechanism we most concern. Basically 00H or FFH state is the worst case to detect the intrinsic isolating ability of vertical dielectric, and CKBD (checkerboard, '0' and '1' state are alternated programmed) pattern can check not only vertical isolating effect, while half possibility when comparing to 00H or FFH, but also lateral cross-bit effect. Data retention pattern selection method during reliability test plays a critical role when applying more and more advanced technology to guarantee NVM (Non-Volatile Memory) product storage lifetime.