Thickness-Dependent Bipolar Resistive Switching Behaviors of NiOx Films
- Resource Type
- Article
- Authors
- Zhu, Hua Xing; Huo, Jin Qian; Qiu, Xiao Yan; Zhang, Yi Yang; Wang, Rui Xue; Chen, Yan; Wong, Chi Man; Yau, Hei Man; Dai, Ji Yan
- Source
- Materials Science Forum; March 2016, Vol. 847 Issue: 1 p131-136, 6p
- Subject
- Language
- ISSN
- 02555476; 16629752
Oxygen-rich polycrystalline NiOx films were prepared by means of magnetron sputtering. Thickness-dependent bipolar resistive switching behaviors revealed that the 20 nm-thick NiOx film presented a clockwise current-voltage loop, while the 60 nm-thick NiOx film achieved an anti-clockwise current-voltage loop. Redox reactions between penetrated Ag ions and drifted oxygen ions in the whole 20 nm-thick NiOx films resulted in the clockwise current-voltage loops. Filamentary conducting paths composed by oxygen vacancies were responsible for the anti-clockwise resistive switching loops of the 60 nm-thick NiOx film.