Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer.
- Resource Type
- Article
- Source
- ACS Applied Materials & Interfaces; 12/26/2019, Vol. 11 Issue 51, p48086-48094, 9p
- Subject
- Language
- ISSN
- 19448244