This study introduces a SiGe/Si superlattice (SL) ferroelectric omega field-effect transistor (Fe- $\Omega $ FET). The ferroelectric characteristics of the developed TiN/ Fe-hafnium–zirconium oxide (HZO)/SL metal–insulator– semiconductor (MIS) capacitor were confirmed through grazing incidence x-ray diffraction (GIXRD) analysis at different temperatures. Fe-HZO usage improved the device performance, achieving subthreshold slopes (SS) of SS $_{\text {min,n}}$ = 62.4 mV/dec and SS $_{\text {min,p}}$ = 71.1 mV/dec, drain-induced barrier lowering (DIBL) values of DIBLn = 26.4 mV/V and DIBLp = 37.6 mV/V, and a high ON–OFF current ratio exceeding $1.0\times 10^{{7}}$ . Compared to the device with HfO2 as a gate insulator with channel width ( $\text{W}_{\text {CH}}{)}$ = 30 nm and gate length ( $\text{L}_{\text {G}}{)}$ = 60 nm, the performance of the developed device was greatly improved. The voltage transfer characteristic (VTC) and voltage gain of SiGe/Si SL Fe- $\Omega $ FET complementary metal–oxide–semiconductor (CMOS) inverter were also demonstrated, with a maximum gain of 111.4 V/V. In addition, the simulation of a state-of-the-art SiGe/Si SL Fe- $\Omega $ FET was investigated. These results indicate that SiGe/Si SL Fe- $\Omega $ FETs exhibit remarkable subthreshold properties and mitigate the short-channel effect.