VTH instabilities of SiC MOSFET are made of a permanent and a recoverable part. VTH hysteresis is a recoverable instability which affects the operation of the device since the threshold voltage depends on the negative bias applied previously. In this paper, the phenomenon is assessed through experiments and TCAD simulation. The results are in good agreement and show that the VTH hysteresis is mainly caused by the hole trapping in the oxide near the interface. The C(V) characteristics of the measured device is similar to the simulated device having a concentration of 1012 holes/cm2 trapped at the interface.