720-V/0.35-m $\Omega \cdot$ cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; May2018, Vol. 39 Issue 5, p715-718, 4p
- Subject
GALLIUM nitride NANOFABRICATION BREAKDOWN voltage - Language
- ISSN
- 07413106