Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si0.35 Ge0.65 OI) Wafers using Cyclical Thermal Oxidation and Annealing.
- Resource Type
- Article
- Source
- MRS Online Proceedings Library; 2007, Vol. 994 Issue 1, p1-6, 6p
- Subject
- Language
- ISSN
- 19464274