Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure.
- Resource Type
- Article
- Source
- Micromachines; Apr2024, Vol. 15 Issue 4, p512, 10p
- Subject
THIN film transistors CHARGE carrier mobility HETEROJUNCTIONS X-ray photoelectron spectroscopy CARRIER density CONDUCTION bands - Language
- ISSN
- 2072666X