pMOSFET With 200% Mobility Enhancement Induced by Multiple Stressors.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Jun2006, Vol. 27 Issue 6, p511-513, 3p, 5 Graphs
- Subject
METAL oxide semiconductor field-effect transistors FIELD-effect transistors METAL oxide semiconductors ELECTRON mobility COMPUTER-aided design TECHNOLOGY - Language
- ISSN
- 07413106