Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance.
- Resource Type
- Article
- Source
- Micromachines; Dec2023, Vol. 14 Issue 12, p2149, 10p
- Subject
TUNNEL field-effect transistors CONDUCTION bands TUNNELS ELECTRIC fields - Language
- ISSN
- 2072666X