Positive bilayer resists for 248- and 193-nm lithography.
- Resource Type
- Article
- Authors
- Sooriyakumaran, Ratnam; Wallraff, Gregory M.; Larson, Carl E.; Fenzel-Alexander, Debra; Di Pietro, Richard A.; Opitz, Juliann; Hofer, Donald C.; LaTulip Jr., Douglas C.; Simons, John P.; Petrillo, Karen E.; Babich, Katherina; Angelopoulos, Marie; Lin, Qinghuang; Katnani, Ahmad D.
- Source
- Proceedings of SPIE; Nov1998 Part 2, Issue 1, p219-227, 9p
- Subject
- Language
- ISSN
- 0277786X