Metal-Insulator Transition Induced by Oxygen Vacancies from Electrochemical Reaction in Ionic Liquid-Gated Manganite Films.
- Resource Type
- Article
- Authors
- Ge, Chen; Jin, Kui-Juan; Gu, Lin; Peng, Li-Cong; Hu, Yong-Sheng; Guo, Hai-Zhong; Shi, Hong-Fei; Li, Jian-Kun; Wang, Jia-Ou; Guo, Xiang-Xin; Wang, Can; He, Meng; Lu, Hui-Bin; Yang, Guo-Zhen
- Source
- Advanced Materials Interfaces; Nov2015, Vol. 2 Issue 17, pn/a-n/a, 6p
- Subject
- MANGANITE
IONIC liquids
ELECTROCHEMISTRY
ELECTRIC insulators & insulation
ELECTRIC potential
- Language
- ISSN
- 21967350
The article discusses a study that demonstrates that the electronic phase of manganite films was successfully manipulated by the interfacial electrochemistry route using ionic liquids (IL) gating. The transition temperature of the usual metal to insulator transition in LSMO films becomes lower with longer gating time, and a novel insulator to metal transition in LSMO films could be achieved at low temperature after applying a small gate voltage.