Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading.
- Resource Type
- Article
- Source
- IEEE Electron Device Letters; Feb2014, Vol. 35 Issue 2, p184-186, 3p
- Subject
ELECTRIC currents COMPUTER simulation METAL oxide semiconductor field-effect transistors SEMICONDUCTOR doping INDIUM phosphide QUANTUM theory - Language
- ISSN
- 07413106