Low Power Volatile and Nonvolatile Memristive Devices from 1D MoO 2 -MoS 2 Core-Shell Heterostructures for Future Bio-Inspired Computing.
- Resource Type
- Academic Journal
- Authors
- Yadav R; Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.; Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India.; Poudyal S; Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.; Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India.; Rajarapu R; Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.; Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India.; Biswal B; Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.; Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India.; Barman PK; Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.; Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India.; Kasiviswanathan S; Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.; Novoselov KS; Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore.; Misra A; Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.; Centre for 2D Materials Research and Innovation, Indian Institute of Technology Madras, Chennai, 600036, India.
- Source
- Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 101235338 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1613-6829 (Electronic) Linking ISSN: 16136810 NLM ISO Abbreviation: Small Subsets: PubMed not MEDLINE; MEDLINE
- Subject
- Language
- English
Memristors-based integrated circuits for emerging bio-inspired computing paradigms require an integrated approach utilizing both volatile and nonvolatile memristive devices. Here, an innovative architecture comprising of 1D CVD-grown core-shell heterostructures (CSHSs) of MoO 2 -MoS 2 is employed as memristors manifesting both volatile switching (with high selectivity of 10 7 and steep slope of 0.6 mV decade -1 ) and nonvolatile switching phenomena (with I on /I off ≈10 3 and switching speed of 60 ns). In these CSHSs, the metallic core MoO 2 with high current carrying capacity provides a conformal and immaculate interface with semiconducting MoS 2 shells and therefore it acts as a bottom electrode for the memristors. The power consumption in volatile devices is as low as 50 pW per set transition and 0.1 fW in standby mode. Voltage-driven current spikes are observed for volatile devices while with nonvolatile memristors, key features of a biological synapse such as short/long-term plasticity and paired pulse facilitation are emulated suggesting their potential for the development of neuromorphic circuits. These CSHSs offer an unprecedented solution for the interfacial issues between metallic electrodes and the layered materials-based switching element with the prospects of developing smaller footprint memristive devices for future integrated circuits.
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