Integrating two-dimensional (2D) semiconducting materials into memristor structures has paved the way for emerging 2D materials to be employed in a vast field of memory applications. Bismuth oxyselenide (Bi 2 O 2 Se), a 2D material with high electron mobility, has attracted significant research interest owing to its great potential in various fields of advanced applications. Here, we explore the out-of-plane intrinsic switching behavior of few-layered Bi 2 O 2 Se via a cross point device for application in conductive bridge random access memory (CBRAM) and artificial synapses for neuromorphic computing. Via state-of-the-art methods, CVD-grown Bi 2 O 2 Se nanoplate is applied as a switching material (SM) in an Al/Cu/Bi 2 O 2 Se/Pd CBRAM structure. The device exhibits ∼90 consecutive DC cycles with a tight distribution of the SET/RESET voltages under a compliance current (CC) of 1 mA, a retention of over 10 ks, and multilevel switching characteristics showing four distinct states at Vread values of 0.1, 0.2, 0.25, and 0.3 V. Moreover, an artificial synapse is realized with potentiation and depression by modulating the conductance. The switching mechanism is explained via Cu migration through Bi 2 O 2 Se based on HRTEM analysis. The present structure shows potential for future integrated memory applications.
Competing Interests: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
(© 2023 Published by Elsevier Ltd.)