n-Si-Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p-n Homojunction in n-Si.
- Resource Type
- Article
- Authors
- Erickson, Ann S.; Zohar, Arava; Cahen, David
- Source
- Advanced Energy Materials. Jun2014, Vol. 4 Issue 9, pn/a-N.PAG. 4p.
- Subject
- *BOLTZMANN'S constant
*POLYETHYLENE
*SULFONATES
*SOLAR cells
*ELECTRIC capacity
- Language
- ISSN
- 1614-6832
The built‐in voltage of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)–nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p–n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field‐effect transistor. [ABSTRACT FROM AUTHOR]