Indirect-band-gap transition in strained GaInAs/InP quantum-well structures.
- Resource Type
- Article
- Authors
- Härle, V.; Bolay, H.; Lux, E.; Michler, P.; Moritz, A.; Forner, T.; Hangleiter, A.; Scholz, F.
- Source
- Journal of Applied Physics. 5/15/1994, Vol. 75 Issue 10, p5067. 5p. 7 Graphs.
- Subject
- *QUANTUM wells
*CONDUCTION electrons
*PHOTOLUMINESCENCE
- Language
- ISSN
- 0021-8979
Presents a study in which the valence-band structure of tensile strained GaInAs quantum wells has been evaluated, using photoluminescence and time-resolved measurements. Characteristics of strained GaInAs quantum wells; Determination of the quantum-well composition and width from the growth parameters; Results and discussion.